Pulse-laser bonding method for through-silicon-via based stacking of electronic components
AssigneeHong Kong Applied Science and Technology Research Institute Company Limited
InventorsXunqing Shi, Wei Ma, Bin Xie, Chang Hwa Chung
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Abstract
There is described a method of forming a through-silicon-via to form an interconnect between two stacked semiconductor components using pulsed laser energy. A hole is formed in each component, and each hole is filled with a plug formed of a first metal. One component is then stacked on another component such that the holes are in alignment, and a pulse of laser energy is applied to form a bond between the metal plugs.
Claims26
A method of forming a through-silicon-via to form an interconnect between two stacked semiconductor components, comprising:
- (a) forming a hole in each said component,
- (b) forming an isolation layer, an adhesion layer, and a SiO2 layer in said hole, wherein the SiO2 layer is removed from the bottom of said hole,
- (c) filling each said hole with a plug formed of a first metal such that said metal plug is level with the bottom surface of the respective said component,
- (d) stacking one said component on another said component such that said holes are in alignment, and
- (e) applying a pulse of laser energy at said holes to form a bond between said metal plugs.
A through-silicon-via interconnect structure between and interconnecting two stacked semiconductor components wherein said structure comprises respective holes formed in said semiconductor components and with a first said component being stacked on and located above a second said component such that the hole formed in the first said component overlies the hole formed in the second said component and which said holes of said first and second said components are in alignment, each said hole including an isolation layer, an adhesion layer, and a SiO2 layer, and being filled with a plug formed of a first metal such that said metal plug is level with the bottom surface of the respective said component and wherein the SiO2 layer is removed from the bottom of said hole, a second metal being provided between said metal plugs of said first metal, and a bond between said metal plugs and including intermetallic compounds formed by diffusion bonding at the junctions of the metal plugs of the first metal and said second metal using a pulse of laser energy applied at said holes.
Dependencies are inferred from the claim text.