PCM with poly-emitter BJT access devices
AssigneeInternational Business Machines Corporation
InventorsTze-Chiang Chen, Chung Hon Lam, Bipin Rajendran
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Abstract
A phase change memory (PCM) includes an array comprising a plurality of memory cells, a memory cell comprising a phase change element (PCE); and a PCE access device comprising a bipolar junction transistor (BJT), the BJT comprising an emitter region comprising a polycrystalline semiconductor. A memory cell for a phase change memory (PCM) includes a phase change element (PCE); and a PCE access device comprising a bipolar junction transistor (BJT), the BJT comprising an emitter region comprising a polycrystalline semiconductor.
Claims11
A phase change memory (PCM) comprising:
- an array comprising a plurality of memory cells, a memory cell comprising:
- a phase change element (PCE);
- and
- a PCE access device comprising a bipolar junction transistor (BJT), the BJT comprising an emitter region comprising a polycrystalline semiconductor;
- wherein a cross-section of an emitter region of the BJT comprises a square having an area and a side length, and wherein an area of a memory cell of the plurality of memory cells is 5 or 6 times the area of the cross-section of the emitter region of the BJT.
A memory cell for a phase change memory (PCM), comprising:
- a phase change element (PCE);
- and
- a PCE access device comprising a bipolar junction transistor (BJT), the BJT comprising an emitter region comprising a polycrystalline semiconductor;
- wherein a cross-section of an emitter region of the BJT comprises a square that has an area and a side length, and wherein an area of the memory cell is 5 or 6 times the area of the cross-section of the emitter region of the BJT.
Dependencies are inferred from the claim text.