Semiconductor device and method for fabricating the same

A method of fabricating a semiconductor device, the method comprising:

• forming a bit line and a bit line pad in a cell region and a peripheral region, respectively, over a substrate;
• forming a first metal layer on the bit line and the bit line pad;
• forming an interlayer insulating film over the first metal layer and the substrate;
• etching the interlayer insulating film in the cell region to form a storage node contact hole;
• filling the storage node contact hole with conductive material to form a storage node contact plug in the cell region;
• forming a second metal layer over the storage node contact plug;
• etching the interlayer insulating film in the peripheral region to form a contact hole exposing the first metal layer over the bit line pad;
• growing a nano tube using the second metal layer in the cell region and the exposed first metal layer in the peripheral region as a catalyst to form a lower electrode and a first contact, respectively;
• and
• forming a second contact connected to the first contact in the peripheral region to form a via contact.