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US 8,138,569 B2Granted
Guard ring structures and method of fabricating thereof
AssigneeNorthrop Grumman Systems Corporation
InventorsJohn Victor D. Veliadis, Megan J. Snook
Life of this patent
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Abstract
A guard ring structure for use in a semiconductor device. The guard ring structure includes a semiconductor layer stack having a first layer and a second layer on top of the first layer, gates structures formed in the first layer; and guard rings formed in the first layer. The second layer has a dopant concentration that is higher than the dopant concentration of the first layer. The gates and the guard rings are formed simultaneously using a single mask.
Claims9
A guard ring structure for use in a semiconductor device, comprising:
- a semiconductor layer stack comprising a first layer, a second layer on top of said first layer and a third layer on top of said second layer;
- gates formed in contact with only said second layer;
- and
- guard rings formed in contact with only said first layer,
- wherein said second layer has a dopant concentration that is higher than a dopant concentration of said first layer, wherein said third layer has a dopant concentration that is higher than the dopant concentration of said second layer, and wherein bottom surfaces of said gates have elevations higher than bottom surfaces of said guard rings.
2 more elements
Dependencies are inferred from the claim text.