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US 8,138,557 B2Granted
Layout structure of MOSFET and layout method thereof
AssigneeGreen Solution Technology Co., Ltd.
InventorsKuo-Wei Peng, Zhong-Wei Liu, Qian-Hua Zhou
Life of this patent
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Abstract
A layout structure of a MOSFET is provided. The layout structure of the MOSFET includes a plurality of MOSFET cells, a first source/drain metal bus structure and a second source/drain metal bus structure. The first source/drain metal bus structure is electrically connected to first sources/drains of the MOSFET cells, and a width thereof is gradually decreased in a predetermined direction. The second source/drain metal bus structure is electrically connected to second sources/drains of the MOSFET cells, and a width thereof is gradually increased in the predetermined direction.
Claims8
A layout structure of a metal-oxide-semiconductor field effect transistor (MOSFET), comprising:
- a plurality of MOSFET cells;
- a first source/drain metal bus structure electrically connected to first sources/drains of the MOSFET cells, and a width of the first source/drain metal bus structure gradually decreased in a predetermined direction;
- a second source/drain metal bus structure electrically connected to second sources/drains of the MOSFET cells, and a width of the second source/drain metal bus structure gradually increased in the predetermined direction;
- a third source/drain metal bus structure electrically connected to the first source/drain metal bus structure, and a width of the third source/drain metal bus structure gradually increased in the predetermined direction;
- a fourth source/drain metal bus structure electrically connected to the second source/drain metal bus structure, and a width of the fourth source/drain metal bus structure gradually decreased in the predetermined direction;
- a first source/drain conducting wire structure electrically connected to the first sources/drains of the MOSFET cells and the first source/drain metal bus structure;
- and
- a second source/drain conducting wire structure electrically connected to the second sources/drains of the MOSFET cells and the second source/drain metal bus structure,
- wherein the first source/drain conducting wire structure and the second source/drain conducting wire structure are saw-toothed, and each of the first source/drain conducting wire structure and the second source/drain conducting wire structure respectively have a plural lines, in which the plural lines extend along a direction being non-parallel with the predetermined direction.
6 more elements
A layout method of a metal-oxide-semiconductor field effect transistor (MOSFET), comprising:
- forming a first source/drain metal bus structure on a plurality of MOSFET cells, wherein the first source/drain metal bus structure is electrically connected to first sources/drains of the MOSFET cells, and a width of the first source/drain metal bus structure is gradually decreased in a predetermined direction;
- forming a second source/drain metal bus structure on the MOSFET cells, wherein the second source/drain metal bus structure is electrically connected to second sources/drains of the MOSFET cells, and a width of the second source/drain metal bus structure is gradually increased in the predetermined direction;
- forming a third source/drain metal bus structure on the first source/drain metal bus structure, wherein the third source/drain metal bus structure is electrically connected to the first source/drain metal bus structure, and a width of the third source/drain metal bus structure is gradually increased in the predetermined direction;
- forming a fourth source/drain metal bus structure on the second source/drain metal bus structure, wherein the fourth source/drain metal bus structure is electrically connected to the second source/drain metal bus structure, and a width of the fourth source/drain metal bus structure is gradually decreased in the predetermined direction;
- forming a first source/drain conducting wire structure, wherein the first source/drain conducting wire structure is electrically connected to the first sources/drains of the MOSFET cells and the first source/drain metal bus structure;
- and
- forming a second source/drain conducting wire structure, wherein second source/drain conducting wire structure is electrically connected to the second sources/drains of the MOSFET cells and the second source/drain metal bus structure,
- wherein the first source/drain conducting wire structure and the second source/drain conducting wire structure are saw-toothed, and each of the first source/drain conducting wire structure and the second source/drain conducting wire structure respectively have a plural lines, in which the plural lines extend along a direction being non-parallel with the predetermined direction.
5 more elements
Dependencies are inferred from the claim text.