Semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorKazuaki Nakajima
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Abstract
A gate insulating film is formed on a main surface of a substrate in which an element isolation region is formed. A metal film is formed on the gate insulating film. A silicon film is formed on the metal film. A gate electrode of a MIS transistor composed of a stacked structure of the silicon film and metal film is formed on an element region and a high-resistance element composed of a stacked structure of the silicon film and metal film is formed on the element isolation region by patterning the silicon film and metal film. An acid-resistant insulating film is formed on the side of the gate electrode. The metal film of the high-resistance element is oxidized. A diffused layer of the MIS transistor is formed in the substrate.
Claims4
A semiconductor device comprising:
- a MIS transistor which includes a gate electrode composed of a stacked structure of a metal film and a first silicon film formed on the metal film;
- and
- a high-resistance element composed of a stacked structure of an oxide film of the metal film and a second silicon film formed on the oxide film.
Dependencies are inferred from the claim text.