Semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorKouji Matsuo
Life of this patent
Estimating the term…
Abstract
A semiconductor device according to an embodiment of the present invention includes a substrate, a gate insulation film formed on the substrate, a gate electrode formed on the gate insulation film, sidewall insulation films provided on side surfaces of the gate electrode, and stress application layers embedded in source and drain regions located, on a surface of the substrate, at a position which sandwiches the gate electrode, and applying stress to a channel region located under the gate insulation film in the substrate, a height of upper ends of interfaces between the substrate and the stress application layers being higher than a height of a lower end of an interface between the substrate and the gate insulation film.
Claims9
A semiconductor device comprising:
- a substrate;
- a gate insulation film formed on the substrate;
- a gate electrode formed on the gate insulation film;
- sidewall insulation films provided on side surfaces of the gate electrode;
- and
- stress application layers embedded in source and drain regions located, on a surface of the substrate, at a position which sandwiches the gate electrode, and applying stress to a channel region located under the gate insulation film in the substrate, a height of upper ends of interfaces between the substrate and the stress application layers being higher than a height of a lower end of an interface between the substrate and the gate insulation film.
Dependencies are inferred from the claim text.