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US 8,138,551 B2Granted
Semiconductor device with transistors and its manufacturing method
AssigneeRenesas Electronics Corporation
InventorTomohiro Hamajima
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Abstract
A semiconductor device includes a semiconductor substrate, a first transistor including a first gate electrode, a first diffusion region, and a second diffusion region respectively formed above the semiconductor substrate, second transistor including a second gate electrode, the first diffusion region, and a third diffusion region respectively formed above the semiconductor substrate, and a node electrode formed above the first diffusion layer, and coupled thereto. The first gate electrode and the second gate electrode are formed separately at respective side walls of the node electrode.
Claims12
A semiconductor device, comprising:
- a semiconductor substrate;
- a first transistor including first gate electrode a first diffusion region, and a second diffusion region respectively formed in the semiconductor substrate;
- a second transistor including a second gate electrode, the first diffusion region, and a third diffusion region respectively formed in the semiconductor substrate;
- a third transistor including the first gate electrode, a fourth diffusion region, and a fifth diffusion region respectively formed in the semiconductor substrate;
- and
- a node electrode formed above the first diffusion layer and coupled thereto,
- wherein the first gate electrode and the second gate electrode are formed separately at respective side walls of the node electrode,
- wherein the node electrode is coupled to the fourth diffusion region,
- wherein a third gate electrode is formed at a side wall of the node electrode,
- wherein a gate width of the first transistor is wider than that of the second transistor.
7 more elements
A semiconductor device, comprising:
- a semiconductor substrate;
- a first transistor including a first gate electrode, a first diffusion region, and a second diffusion region respectively formed in the semiconductor substrate;
- a second transistor including a second gate electrode, the first diffusion region, and a third diffusion region respectively formed in the semiconductor substrate;
- a third transistor including the first gate electrode, a fourth diffusion region, and a fifth diffusion region respectively formed in the semiconductor substrate;
- a node electrode formed above the first diffusion layer and coupled thereto,
- wherein the first gate electrode and the second gate electrode are formed separately at respective side walls of the node electrode,
- wherein the node electrode is coupled to the fourth diffusion region, and
- wherein a third gate electrode is formed at a side wall of the node electrode;
- and
- a fourth transistor including a fourth gate electrode, a sixth diffusion region, and a seventh diffusion region formed in the semiconductor substrate respectively,
- wherein the node electrode is coupled to the sixth diffusion region, and
- wherein the fourth gate electrode is formed at the side wall of a second node electrode.
9 more elements
A semiconductor device, comprising:
- a semiconductor substrate;
- a first diffusion region in the semiconductor substrate;
- a second diffusion region in the semiconductor substrate;
- a third diffusion region in the semiconductor substrate;
- a node electrode coupled to the first diffusion region;
- an insulating layer formed on a side of the node electrode;
- a first gate electrode formed as a side wall of the node electrode and the insulating layer, and disposed between the first diffusion region and the second diffusion region;
- a second gate electrode formed as the side wall of the node electrode and the insulating layer, and disposed between the first diffusion region and the third diffusion region,
- wherein the node electrode and the insulating layer is disposed between the first gate electrode and the second gate electrode;
- a fourth diffusion region formed in the semiconductor substrate;
- and
- a third gate electrode formed as the side wall of the node electrode and the insulating layer, the fourth diffusion region being formed at a side of the third gate electrode and the first diffusion region being formed at a side of the first and second gate electrodes,
- wherein the node electrode is extended in a predetermined direction, and
- wherein, in the predetermined direction, the first gate electrode and the third gate electrode are disposed in parallel.
11 more elements
A semiconductor device, comprising:
- a semiconductor substrate;
- a first diffusion region in the semiconductor substrate;
- a second diffusion region in the semiconductor substrate;
- a third diffusion region in the semiconductor substrate;
- a node electrode coupled to the first diffusion region;
- an insulating layer formed on a side of the node electrode;
- a first gate electrode formed as a side wall of the node electrode and the insulating layer, and disposed between the first diffusion region and the second diffusion region;
- a second gate electrode formed as the side wall of the node electrode and the insulating layer, and disposed between the first diffusion region and the third diffusion region,
- wherein the node electrode comprises a first node electrode,
- wherein the insulating layer comprises a first insulating layer;
- a fourth diffusion region in the semiconductor substrate;
- a fifth diffusion region on the semiconductor substrate;
- a sixth diffusion region on the semiconductor substrate;
- a second node electrode coupled to the fourth diffusion region;
- a second insulating layer formed on a side of the second node electrode;
- a third gate electrode formed as a side wall of the second node electrode and the second insulating layer, and disposed between the fourth diffusion region and the fifth diffusion region;
- a fourth gate electrode formed as the side wall of the second node electrode and the second insulating layer, and disposed between the fourth diffusion region and the sixth diffusion region;
- a first data line coupled to the third gate electrode;
- a second data line coupled to the fourth gate electrode;
- and
- a terminal coupled to the third diffusion region and the sixth diffusion region respectively,
- wherein the first gate electrode, the second gate electrode, the second diffusion region, and the fifth diffusion region are coupled to each other, and
- wherein the terminal is output a voltage based on a voltage of the first data line, and on a voltage of the second data line.
20 more elements
A semiconductor device, comprising:
- a semiconductor substrate;
- a first diffusion region in the semiconductor substrate;
- a second diffusion region in the semiconductor substrate;
- a third diffusion region in the semiconductor substrate;
- a node electrode coupled to the first diffusion region;
- an insulating layer formed on a side of the node electrode;
- a first gate electrode formed as a side wall of the node electrode and the insulating layer, and disposed between the first diffusion region and the second diffusion region;
- a second gate electrode formed as the side wall of the node electrode and the insulating layer, and disposed between the first diffusion region and the third diffusion region;
- a fourth diffusion region formed in the semiconductor substrate;
- and
- a third gate electrode formed as the side wall of the node electrode and the insulating layer, and disposed between the first diffusion region and the fourth diffusion region.
8 more elements
Dependencies are inferred from the claim text.