Method of manufacturing a semiconductor device and a semiconductor device
AssigneeFujitsu Semiconductor Limited
InventorHajime Kurata
Life of this patent
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Abstract
A method of manufacturing a semiconductor device, has forming a gate insulating film over a surface of a substrate, eliminating a portion of the gate insulating film in a region, forming a gate electrode over the gate insulating film and a drain electrode on the region, implanting first impurities into the substrate using the gate electrode and the drain electrode as a mask, forming an insulating film to fill the space between the gate electrode and the drain electrode, and implanting second impurities into the substrate to form a source region using the gate electrode, the drain electrode and the insulating film as a mask.
Claims6
A semiconductor device comprising:
- a gate insulating film formed over a substrate;
- a gate electrode over the gate insulating film;
- a drain region formed within the substrate on one side of the gate electrode;
- a drain electrode formed on the substrate and electrically connected to the drain region,
- the drain electrode is a polysilicon implanted with conductive impurities;
- a first silicide layer on the surface of the drain electrode;
- a sidewall insulating film formed on the side of the gate electrode opposite to the drain electrode;
- an insulating film formed between the gate electrode and the drain electrode;
- and
- a source region having a grater depth than the drain region and being formed adjacent to the sidewall insulating film,
- wherein the drain region is aligned to the gate electrode and the drain electrode.
A semiconductor device comprising:
- a gate insulating film formed over a substrate;
- a gate electrode over the gate insulating film;
- a drain region formed within the substrate on one side of the gate electrode;
- a drain electrode formed on the substrate and electrically connected to the drain region,
- the drain electrode is a polysilicon implanted with conductive impurities;
- a first silicide layer on the surface of the drain electrode;
- a sidewall insulating film formed on the side of the gate electrode opposite to the drain electrode;
- an insulating film formed between the gate electrode and the drain electrode;
- and
- a source region having a grater depth than the drain region and being formed adjacent to the sidewall insulating film,
- wherein implanting impurities into the substrate to form a source region using the gate electrode, the drain electrode and the insulating film as a mask.
Dependencies are inferred from the claim text.