Semiconductor device and method for manufacturing the same

An apparatus, comprising:

• a substrate over which a first conductive type well is formed;
• and
• an LDMOS device that includes a gate electrode, a drain region formed in the substrate, a trench formed over the substrate, a second conductive type body surrounding both sides and a bottom surface of the trench, a first source region, a second region and a second conductive type contact region formed between the first source region and the second source region on the bottom surface of the trench in the second conductive type body,
• wherein the gate electrode is formed in a bent shape along a first surface formed over the substrate, a second surface formed along a side wall of the trench, and a third surface formed at a portion of the bottom surface of the trench.