Interconnect structure for semiconductor devices

An integrated circuit, comprising:

• a semiconductor body including an array of semiconductor pillars arranged in a series of rows and columns, where pillars within each row and pillars within each column are laterally separated from one another by trenches extending beneath the surface of the semiconductor body;
• a metal body arranged within a trench along-side a column of pillars;
• and
• a conductive contact element extending along a connecting path between at least two pillars of the column, the contact element conductively coupling the metal body to the at least two pillars of the column, thereby permitting current to pass between the metal body to the at least two pillars of the column.

An integrated circuit, comprising:

• a semiconductor body including an array of semiconductor pillars arranged in a series of rows and columns, where pillars within each row and pillars within each column are laterally separated from one another by respective trenches extending beneath a top surface of the semiconductor pillars;
• first and second metal bodies in a trench along-side a row or column of pillars;
• the first and second metal bodies respectively extending along opposing sides of the trench;
• and
• a first conductive contact element disposed beneath the surface of the semiconductor body and conductively coupling the first metal body to at least one pillar on a first side of the trench.