Semiconductor device having cylindrical lower electrode of capacitor and manufacturing method thereof

A manufacturing method of a semiconductor device, comprising:

• forming a plurality of openings in an insulation film;
• forming a cylindrical lower electrode in each of the openings, the cylindrical lower electrode having an internal wall and an external wall;
• etching a part of the insulation film so as to project an upper end region of the lower electrode from a surface of the insulation film, thereby exposing the external wall of the upper end region of the lower electrode;
• forming a supporting film that connects to at least a part of the internal wall and a part of the external wall at the upper end region of the lower electrode;
• removing the insulation film;
• forming a dielectric film that covers an exposed surface of the lower electrode;
• and
• forming an upper electrode such as facing to the lower electrode with an intervention of the dielectric film therebetween.

A manufacturing method of a semiconductor device, comprising:

• forming a first supporting film on an upper surface of an insulation film;
• forming a plurality of openings that penetrates the first supporting film and the insulation film;
• forming a cylindrical lower electrode in each of the openings, the cylindrical lower electrode having an internal wall and an external wall;
• forming a second supporting film on the first supporting film and the internal wall of the lower electrode;
• removing the insulation film;
• and
• forming a dielectric film that covers an exposed surface of the lower electrode;
• and
• forming an upper electrode such as facing to the lower electrode with an intervention of the dielectric film therebetween.