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US 8,138,535 B2Granted
Method for manufacturing a pixel sensing circuit
AssigneeON Semiconductor Trading, Ltd.
InventorManuel Innocent
Life of this patent
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Abstract
Systems and methods of pixel sensing circuits. In accordance with a first embodiment of the present invention, a pixel sensing circuit includes a floating diffusion functionally coupled to and surrounded by a ring transfer transistor. The ring transfer transistor is functionally coupled to and surrounded by a photo diode. The photo diode may be surrounded by a region of poly silicon. The disclosed structure provides radiation hardening and low light performance.
Claims11
A method for manufacturing a pixel sensing circuit, comprising:
- providing a semiconductor material of a first conductivity type;
- forming a gate structure configured as an enclosed geometric structure over a portion of the semiconductor material, the gate structure having an interior side and an exterior side;
- forming a first doped region of a second conductivity type adjacent the interior side of the gate structure;
- forming a second doped region of the second conductivity type adjacent the exterior side of the gate structure, wherein the gate structure and the first and second doped regions form a transfer transistor and wherein the first doped region serves as a charge storage element;
- and
- forming a third doped region of the first conductivity type adjacent the exterior side of the gate structure and laterally surrounding the gate structure, wherein the third doped region, the second doped region, and a portion of the semiconductor material form a photo diode region, and wherein a reset transistor is formed outside the photo diode region.
3 more elements
Dependencies are inferred from the claim text.