Pin photodiode and manufacturing method of same

A semiconductor device characterized by the following facts:

• a semiconductor device containing a photodiode has the following parts:
• a first silicon layer of a first electroconductive type formed on a substrate,
• a second silicon layer of a second electroconductive type formed on said first silicon layer,
• a silicon oxide region defining the active region of the second silicon layer,
• a silicon oxide film covering the surface of said active region,
• a silicon nitride film that covers at least said silicon oxide film,
• a silicide layer that is formed along the outer periphery of said active region and via a connection region formed between said silicon oxide region and said silicon oxide film,
• and an electrode formed on said silicide layer;
• the side portion of said silicide layer is connected to said silicon oxide film, and at least a portion of the surface of said silicide layer is exposed as a region for hydrogen diffusion;
• and said photodiode detects light incident on said active region.