Structures, design structures and methods of fabricating global shutter pixel sensor cells

A method of fabricating a pixel sensor cell, comprising:

• forming a photodiode body in a first region of a semiconductor layer;
• forming a floating diffusion node in a second region of said semiconductor layer, a third region of said semiconductor layer between and abutting said first and second regions;
• and
• forming dielectric isolation in said semiconductor layer, said dielectric isolation surrounding said first, second and third regions, said dielectric isolation abutting said first, second and third regions and said photodiode body, said dielectric isolation not abutting said floating diffusion node, portions of said second region intervening between said dielectric isolation and said floating diffusion node;
• and
• forming a dielectric passivation layer abutting said dielectric isolation in said second region, said dielectric isolation passivation not abutting said floating diffusion node, portions of said second region intervening between said dielectric passivation layer and floating diffusion node.

A design structure, comprising:

• design data tangibly embodied in a non-transitory machine-readable medium, the design data being used for designing, manufacturing, or testing an integrated circuit, the design data
• comprising information describing a pixel sensor cell˜the pixel sensor cell comprising:
• a photodiode body in a first region of a semiconductor layer;
• a floating diffusion node in a second region of said semiconductor layer, a third region of said semiconductor layer between and abutting said first and second regions;
• and
• dielectric isolation in said semiconductor layer, said dielectric isolation surrounding said first, second and third regions, said dielectric isolation abutting said first, second and third regions and said photodiode body, said dielectric isolation not abutting said floating diffusion node, portions of said second region intervening between said dielectric isolation and said floating diffusion node;
• and
• a dielectric passivation layer abutting said dielectric isolation in said second region, said dielectric isolation passivation not abutting said floating diffusion node, portions of said second region intervening between said dielectric passivation layer and floating diffusion node.