Package configurations for low EMI circuits
AssigneeTransphorm Inc.
InventorYifeng Wu
Life of this patent
Estimating the term…
Loading patent…
AssigneeTransphorm Inc.
InventorYifeng Wu
Estimating the term…
An electronic component includes a high voltage switching transistor encased in a package. The high voltage switching transistor comprises a source electrode, a gate electrode, and a drain electrode all on a first side of the high voltage switching transistor. The source electrode is electrically connected to a conducting structural portion of the package. Assemblies using the abovementioned transistor with another transistor can be formed, where the source of one transistor can be electrically connected to a conducting structural portion of a package containing the transistor and a drain of the second transistor is electrically connected to the second conductive structural portion of a package that houses the second transistor. Alternatively, the source of the second transistor is electrically isolated from its conductive structural portion, and the drain of the second transistor is electrically isolated from its conductive structural portion.
An electronic component comprising a high voltage switching transistor encased in a package, wherein
An assembly, comprising:
An electronic component comprising a transistor encased in a package, the package surrounding the transistor;
An electronic component comprising a transistor encased in a package, the package surrounding the transistor;
Dependencies are inferred from the claim text.