Solid state image pickup device and manufacturing method therefor

A MOS-type solid-state image pickup device, on a semiconductor substrate of a second conductivity type, comprising:

• a photoelectric conversion unit having a first semiconductor region of a first conductive type, a second semiconductor region of a second conductive type forming a pn-junction with the first semiconductor region, and a third semiconductor region of the first conductive type disposed on the second semiconductor region;
• a transfer gate electrode disposed on an insulation film and transferring a carrier from the second semiconductor region to a fourth semiconductor region of the second conductivity type;
• an amplifying MOS transistor having a gate electrode connected to the fourth semiconductor region;
• and
• a fifth semiconductor region of the second conductivity type that is continuously disposed to the second semiconductor region, disposed under the gate electrode,
• wherein an entire surface of the third semiconductor region is covered with the insulation film, and a side portion of the third semiconductor region that is laterally opposite to the transfer gate is in contact with the first semiconductor region.