Transistor and semiconductor device
AssigneesNational University Corporation Tohoku University, Foundation for Advancement of International Science
InventorsTadahiro Ohmi, Akinobu Teramoto, Rihito Kuroda
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Abstract
An accumulation mode transistor has an impurity concentration of a semiconductor layer in a channel region at a value higher than 2×1017 cm−3 to achieve a large gate voltage swing.
Claims12
An accumulation-mode transistor comprising a channel region and a source region and a drain region formed at both ends of said channel region, wherein said channel region has an impurity concentration higher than 2×1017 cm−3 and said channel region is formed of an n-type semiconductor with electrons used as carriers or is formed of a p-type semiconductor with holes used as carriers, and
- wherein said source region and said drain region are formed of a metal or a metal-semiconductor compound having a work function with a difference of 0.32 eV or less with respect to a work function of the semiconductor of said channel region.
Dependencies are inferred from the claim text.