Semiconductor structures including dual fins

A semiconductor structure, comprising:

• a plurality of trenches formed in a substrate and at least partially filled with a dielectric material;
• an array of recesses with fin-like structures protruding on opposite sides formed in regions of the substrate between the plurality of trenches, the fin-like structures having sloped sidewalls;
• and
• a mask material disposed over and terminating on surfaces at ends of the fin-like structures, sidewalls of the mask material substantially contiguous with the sloped sidewalls of the fin-like structures.

A semiconductor structure, comprising:

• at least one pair of trenches in a substrate;
• a dielectric material at least partially filling the at least one pair of trenches;
• a recessed region between the at least one pair of trenches, the recessed region having a depth less than a depth of the at least one pair of trenches, sidewalls of the recessed region and the at least one pair of trenches defining fin structures therebetween;
• an oxide material overlying a portion of the dielectric material, extending onto sidewalls of the at least one pair of trenches, and terminating on upper surfaces of the fin structures;
• and
• an electrode overlying the oxide material.