US 8,138,511 B2Granted

Radiation-emitting semiconductor component and method for producing the semiconductor component

AssigneeOSRAM GmbH

InventorsJohannes Baur, Dominik Eisert, Michael Fehrer, Berthold Hahn, Volker Härle, Marianne Ortmann, Uwe Strauss, Johannes Völkl, Ulrich Zehnder

Life of this patent

Estimating the term…

patentgrep

Loading patent…

Abstract

A radiation-emitting semiconductor component has an improved radiation efficiency. The semiconductor component has a multilayer structure with an active layer for generating radiation within the multilayer structure and also a window having a first and a second main surface. The multi-layer structure adjoins the first main surface of the window. At least one recess, such as a trench or a pit, is formed in the window from the second main surface for the purpose of increasing the radiation efficiency. The recess preferably has a trapezoidal cross section tapering toward the first main surface and can be produced for example by sawing into the window.

Claims31

Dependent claims

A radiation-emitting semiconductor component, comprising:

a multilayer structure including an active layer for generating radiation in said multilayer structure;
electrical contacts connected to said active layer;
and
a radiation-transmissive window with a first main surface adjoining said multilayer structure and a second main surface opposite said first main surface, wherein said window contains a material selected from the group consisting of ITO, SnO, ZnO, and InO;
and
said second main surface having at least one void selected from the group consisting of a trench recess and a pit recess formed therein for increasing a coupling-out of radiation from said window;
wherein at least part of the radiation generated in the radiation-emitting semiconductor component is transmitted through a side surface of the void.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application: 11/567,977Filed 7 Dec 2006 · continuation
Priority: DE 101 11 5019 Mar 2001
Published: US 2008/0179380 A131 Jul 2008
Granted: 20 Mar 2012
Term ends: Not estimatedThe source records don’t support an estimate.

Classification7 codes

H10H 20/819
Bodies: characterised by their shape, e.g. curved or truncated substrates
H10H 20/018
Of bodies, e.g. forming semiconductor layers: bonding of wafers
H10H 20/81
Constructional details: bodies
H10W 72/536
Shapes of wire connectors: the connected ends being ball-shaped

Family

PCT/DE02/00514Parent of this continuation · filed 13 Feb 2002
Application10/657,841Parent of this continuation · filed 9 Sep 2003
US 2008/0179380 A1Pre-grant publication · published 31 Jul 2008
US 7,169,632 B2Parent of this continuation
US 2004/0046179 A1Published application
US 8,138,511 B2This patent

From the US filing history. Foreign family members aren’t listed.