Gallium nitride light emitting devices and methods of manufacturing the same

A gallium nitride (GaN) light emitting device, comprising:

• a silicon substrate having a plurality of patterns, wherein each pattern includes a pair of sidewalls facing each other;
• a reflective layer on the silicon substrate, wherein one sidewall of the pair is exposed by the reflective layer;
• a buffer layer on the exposed sidewall;
• an n-type nitride layer on the reflective layer, wherein the n-type nitride layer covers the exposed side wall;
• and
• a GaN-based light emitting structure layer formed on the n-type nitride layer.

A method of a manufacturing a gallium nitride (GaN) light emitting device, the method comprising:

• sequentially forming a buffer layer and a first nitride layer on a silicon substrate;
• forming a plurality of patterns by dry etching the first nitride layer, wherein each of the patterns includes a pair of sidewalls that face each other;
• depositing a reflective layer on the first nitride layer so that one sidewall of the pair is exposed by the reflective layer;
• forming an n-type nitride layer that covers the first nitride layer by horizontally growing an n-type nitride from the exposed sidewall;
• and forming a GaN-based light emitting structure layer on the n-type nitride layer.

A method of manufacturing a gallium nitride (GaN) light emitting device, the method comprising:

• forming a plurality of patterns by patterning a silicon substrate, wherein each of the patterns includes a pair of sidewalls that face each other;
• depositing a reflective layer on the silicon substrate so that one sidewall of the pair is exposed by the reflective layer;
• forming a buffer layer on the exposed sidewall;
• forming an n-type nitride layer that covers the silicon substrate by horizontally growing an n-type nitride from the buffer layer;
• and
• forming a GaN-based light emitting structure layer on the n-type nitride layer.