US 8,138,504 B2 · Silicon carbide semiconductor device and method of manufacturing the same

Abstract

A silicon carbide semiconductor device having excellent performance characteristics and a method of manufacturing the same are obtained. A coating film made of Si is formed on an initial growth layer on a 4H—SiC substrate, and an extended terrace surface is formed in a region covered with the coating film. Next, the coating film is removed, and a new growth layer is epitaxially grown on the initial growth layer. A 3C—SiC portion made of 3C—SiC crystals having a polytype stable at a low temperature is grown on the extended terrace surface of the initial growth layer. A channel region of a MOSFET or the like is provided in the 3C—SiC portion having a narrow band gap. As a result, the channel mobility is improved because of a reduction in an interface state, and a silicon carbide semiconductor device having excellent performance characteristics is obtained.

Claims6

Dependent claims

A silicon carbide semiconductor device, comprising:

a base semiconductor layer made of hexagonal silicon carbide and having a surface that includes a part having an extended terrace surface and a remaining part having an unextended terrace surface, wherein said base semiconductor layer is a 4H type silicon carbide layer having a main surface offset at not smaller than 2° with respect to a {0001} surface;
an epitaxial layer formed on said base semiconductor layer, wherein the epitaxial layer includes a 3C type silicon carbide portion located on the extended terrace surface and a 4H type silicon carbide portion on the unextended terrace surface;
and
a channel region formed in a portion located on said extended terrace surface in said epitaxial layer.

1 more element

Dependencies are inferred from the claim text.

Silicon carbide semiconductor device and method of manufacturing the same

Life of this patent

Silicon carbide semiconductor device and method of manufacturing the same

Life of this patent

Abstract

Claims6