Stacked photoelectric conversion device

A stacked photoelectric conversion device comprising:

• a first photoelectric conversion layer, a second photoelectric conversion layer and a third photoelectric conversion layer stacked in this order from a light entrance side, each photoelectric conversion layer having a p-i-n junction and formed of a silicon based semiconductor, wherein
• a short-circuit photocurrent of the first photoelectric conversion layer is larger than a short-circuit photocurrent of the second photoelectric conversion layer or a short-circuit photocurrent of the third photoelectric conversion layer under a condition of light source:
• xenon lamp, irradiance:
• 100 mW/cm2, AM:
• 1.5, and temperature:
• 25° C., wherein
• a ratio of the short-circuit photocurrent of the first photoelectric conversion layer to a smaller one of the short-circuit photocurrent of the second photoelectric conversion layer and the short-circuit photocurrent of the third photoelectric conversion layer is 1.01 to 1.30.