GaN series light-emitting diode structure
AssigneeChang Gung University
InventorsRay-Ming Lin, Jhong-Hao Jiang, Bor-Ren Fang
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Abstract
The present invention relates to a GaN series light-emitting diode structure, which includes a substrate; at least one GaN series layer formed over the substrate; subsequently an interface blocking structure composed of an n-type GaN series superlattice structure and a GaN series light-emitting layer, and a GaN series light-emitting layer are formed over the GaN series layer; and a p-type GaN series layer formed over the GaN series light-emitting layer. In the present invention, the radiative recombination efficiency is improved by introducing an interface blocking structure before the light-emitting layer under the epitaxial conditions of low temperature and pure nitrogen atmosphere.
Claims14
A GaN series LED structure, including:
- a substrate;
- at least one GaN series layer, wherein the GaN series layer is formed over said substrate;
- a light-emitting layer, wherein the light-emitting layer is formed over said GaN series layer;
- a p-type GaN series layer, wherein the p-type GaN series layer is formed over said light-emitting layer;
- and
- at least one interface blocking layer, wherein the interface blocking layer is formed between said GaN series layer and said light-emitting layer.
A GaN series LED structure, including:
- a substrate;
- a GaN series buffer layer, wherein the GaN series buffer layer is formed over said substrate;
- a first n-type GaN series superlattice structure layer, wherein the first n-type GaN series superlattice structure layer is formed over the GaN series buffer layer;
- a first n-type GaN series layer, wherein the first n-type GaN series layer is formed over said first n-type GaN series superlattice structure layer;
- a second n-type GaN series superlattice structure layer, wherein the second n-type GaN series superlattice structure layer is formed over said first n-type GaN series layer;
- a third n-type GaN series layer, wherein the third n-type GaN series layer is formed over said second n-type GaN series superlattice structure layer;
- a light-emitting layer, wherein the light-emitting layer is formed over said third n-type GaN series layer;
- and
- a p-type GaN series layer, wherein the p-type GaN series layer is formed over said light-emitting layer.
Dependencies are inferred from the claim text.