Formation of carbon and semiconductor nanomaterials using molecular assemblies

A transistor comprising:

• at least two segments of a non-reactive layer on a gate dielectric or a substrate;
• a first electrode and a second electrode on each of the at least two non-reactive layers;
• and carbon nanomaterials or semiconductor nanomaterials located above the gate dielectric or substrate and between the first electrode and second electrode;
• wherein said carbon nanomaterials or semiconductor nanomaterials are obtainable by attaching a molecular precursor to the first electrode, the second electrode or both the first and the second electrodes, wherein the molecular precursor includes a surface binding group for attachment to at least one electrode and a binding group for attachment of metal-containing species;
• complexing the binding group for attachment of metal-containing species with a metal-containing species selected from a metal cation, metal compound, or metal or metal-oxide nanoparticle to form a metallized molecular precursor;
• and heating the metallized molecular precursor to provide a catalytic site from which the carbon or semiconductor nanomaterials form above the gate dielectric or the substrate.

An electronic device structure comprising:

• a patterned electronic surface selected from a patterned metal surface, patterned dielectric surface or patterned semiconductor surface;
• and carbon nanomaterials or semiconductor nanomaterials located on the surface;
• wherein said carbon nanomaterials or semiconductor nanomaterials are obtainable by attaching a molecular precursor to the patterned electronic surface, wherein the molecular precursor includes a surface binding group for attachment to the patterned electronic surface and a binding group for attachment of metal-containing species;
• complexing the binding group for attachment of metal-containing species with a metal containing species selected from a metal cation, metal compound, or metal or metal-oxide nanoparticle to form a metallized molecular precursor;
• and heating the metallized molecular precursor to provide a catalytic site on the patterned electronic surface from which the carbon nanomaterials or semiconductor nanomaterials form.