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US 8,138,491 B2Granted
Self-aligned nanotube field effect transistor
AssigneeInternational Business Machines Corporation
InventorsJoerg Appenzeller, Phaedon Avouris, Kevin K. Chan, Philip G. Collins, Richard Martel, Hon-Sum Philip Wong
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Abstract
A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.
Claims3
A self-aligned carbon-nanotube field effect transistor semiconductor device comprising:
- a carbon-nanotube deposited horizontally on a substrate;
- a source formed at a first end of the carbon-nanotube;
- a drain formed at a second end of the carbon-nanotube;
- a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film, wherein the gate wraps around the dielectric film and the carbon-nanotube,
- wherein the substrate comprises:
- a silicon substrate;
- and
- a thermal oxide disposed on the silicon substrate;
- and
- a trench disposed in the thermal oxide, wherein a portion of the dielectric film and a portion of the gate are disposed in the trench.
7 more elements
Dependencies are inferred from the claim text.