Variable resistance non-volatile memory cells and methods of fabricating same
AssigneeSamsung Electronics Co., Ltd.
InventorsGyu-Hwan Oh, Shin-Jae Kang, In-Sun Park, Hyun-Seok Lim, Nak-Hyun Lim, Hyun-Suk Lee
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Abstract
Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. An integrated circuit memory cell can be fabricated by forming an ohmic layer on an upper surface of a conductive structure and extending away from the structure along at least a portion of a sidewall of an opening in an insulation layer. An electrode layer is formed on the ohmic layer. A variable resistivity material is formed on the insulation layer and electrically connected to the electrode layer.
Claims20
An integrated circuit memory cell comprising:
- a substrate;
- a conductive structure on the substrate;
- an insulation layer with an opening that exposes the structure;
- a doped silicon layer on the upper surface of the conductive structure and extending away from the conductive structure along at least a portion of a sidewall of the opening;
- a metal layer on the doped silicon layer with a metal silicide layer along an interface between the metal layer and the doped silicon layer, the metal silicide layer forming a cup-shaped ohmic layer extending away from the conductive structure along at least a portion of a sidewall of the opening, and the metal layer forming an electrode layer;
- and
- a variable resistivity material on the insulation layer and electrically connected to the electrode layer.
An integrated circuit memory cell comprising:
- a substrate;
- a conductive structure on the substrate;
- an insulation layer with an opening that exposes the conductive structure;
- a cup-shaped ohmic layer on the structure and extending away from the structure along at least a portion of a sidewall of the opening;
- an insulator ring on an upper surface of the ohmic layer;
- an electrode layer on sidewalls and a top surface of an interior of the ohmic layer;
- and
- a variable resistivity material on the insulation layer and electrically connected to the electrode layer, wherein the insulator ring insulates the variable resistivity material from the ohmic layer.
Dependencies are inferred from the claim text.