Non-volatile semiconductor storage device and method of manufacturing the same

A non-volatile semiconductor storage device comprising;

• a plurality of memory element groups, each of the memory element groups having a plurality of memory elements, each of the memory elements having a resistance-change element and a Schottky diode connected in series,
• each of the memory element groups comprising:
• a first columnar layer extending in a lamination direction;
• a first insulation layer formed on a side surface of the first columnar layer and functioning as the resistance-change element;
• and
• a first conductive layer formed to surround the first columnar layer via the first insulation layer,
• the first columnar layer being formed of metal, and
• the first conductive layer being formed of a semiconductor having such a impurity concentration that the first columnar layer and the semiconductor configure the Schottky diode.

A method of manufacturing a non-volatile semiconductor storage device having a plurality of memory element groups, each of the memory element groups having a plurality of memory elements, each of the memory elements having a resistance-change element and a Schottky diode connected in series, the method comprising:

• laminating a plurality of first conductive layers;
• forming a first hole to penetrate the plurality of first conductive layers;
• forming a first insulation layer on a side surface of the first hole, the first insulation layer functioning as the resistance-change element;
• and
• forming a first columnar layer to fill up the first hole,
• the first conductive layers being formed of metal;
• and
• the first columnar layer being formed of a semiconductor having such a impurity concentration that the first conductive layers and the semiconductor configure the Schottky diode.