Plasma processing apparatus and plasma processing method

A plasma processing apparatus comprising:

• an evacuable processing chamber which is grounded;
• a first electrode attached to the processing chamber via an insulating material or a space;
• a second electrode disposed in parallel with the first electrode space apart therefrom in the processing chamber, the second electrode supporting a target substrate to face the first electrode;
• a first radio frequency power supply unit for applying a first radio frequency power of a first frequency to the second electrode;
• a second radio frequency power supply unit for applying a second radio frequency power of a second frequency lower than the first frequency to the second electrode;
• a processing gas supply unit for supplying a processing gas to a processing space formed by the first and the second electrode and a sidewall of the processing chamber;
• a DC power supply for applying a DC voltage to the first electrode;
• and
• a filter electrically connected between the first electrode and the DC power supply, the filter allowing a direct current to substantially pass therethrough and having a resonance frequency associated with the second frequency and an antiresonance frequency associated with the first frequency.