Manufacturing method for semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsTaketomi Asami, Mitsuhiro Ichijo, Satoshi Toriumi, Takashi Ohtsuki, Shunpei Yamazaki
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Abstract
The present invention is provided in order to remove contamination due to contaminant impurities of the interfaces of each film which forms a TFT, which is the major factor that reduces the reliability of TFTs. By connecting a washing chamber and a film formation chamber, film formation can be carried out without exposing TFTs to the air during the time from washing step to the film formation step and it becomes possible to maintain the cleanliness of the interfaces of each film which form the TFT.
Claims22
A method for manufacturing a semiconductor device comprising:
- forming an oxide film on a base insulating film by applying water in which ozone is dissolved;
- removing the oxide film and contaminant impurities on the base insulating film;
- forming a semiconductor film on the base insulating film;
- forming a gate insulating film on the semiconductor film;
- and
- forming a gate electrode on the gate insulating film.
A method for manufacturing a semiconductor device comprising:
- forming a first base insulating film on a substrate;
- forming a second base insulating film on the first base insulating film;
- forming an oxide film on the second base insulating film by applying water in which ozone is dissolved;
- removing the oxide film and contaminant impurities on the second base insulating film;
- forming a semiconductor film on the second base insulating film;
- forming a gate insulating film on the semiconductor film;
- and
- forming a gate electrode on the gate insulating film.
Dependencies are inferred from the claim text.