Method of substrate treatment, process for producing semiconductor device, substrate treating apparatus, and recording medium
AssigneeTokyo Electron Limited
InventorHidenori Miyoshi
Life of this patent
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Abstract
Substrate processing apparatus 100 includes supporting table 103 for not only supporting a target substrate W but also heating the target substrate W; processing chamber 101 having the supporting table disposed therein; and gas supply unit 102 for supplying a processing gas into the processing chamber 101. The processing gas includes organic acid metal complex or organic acid metal salt.
Claims17
A substrate processing method for processing a target substrate including a low-K dielectric insulating film and a metal layer, the method comprising:
- forming an opening in the low-K dielectric insulating film to expose the metal layer;
- supplying a vaporized or sublimated organic acid metal complex or organic acid metal salt onto the target substrate while heating the target substrate;
- and
- with the vaporized or sublimated organic acid metal complex or organic acid metal salt, denuding an oxide film on the metal layer exposed in the low-K dielectric insulating film and dehydrating the low-K dielectric insulating film.
A method for manufacturing a semiconductor device having metal wiring and a low-K dielectric interlayer insulating film, the method comprising:
- forming an opening in the low-K dielectric insulating film to expose the metal wiring;
- supplying a vaporized or sublimated organic acid metal complex or organic acid metal salt onto a target substrate on which the metal wiring and the interlayer insulating film are formed while heating the target substrate;
- and
- with the vaporized or sublimated organic acid metal complex or organic acid metal salt, denuding an oxide film on the metal wiring exposed in the low-K dielectric insulating film and dehydrating the low-K dielectric interlayer insulating film.
Dependencies are inferred from the claim text.