Method for forming metal interconnects in a dielectric material
AssigneesSTMicroelectronics (Crolles 2) SAS, Koninkljike Philips Electronics N.V.
InventorsJoaquin Torres, Vincent Arnal, Laurent-Georges Gosset, Wim Besling
Life of this patent
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Abstract
A semiconductor device includes an interconnect having electrically conductive portions and a dielectric layer made of a first dielectric material. A trench is formed in the dielectric layer. The exposed portions of the dielectric layer which form the side walls of the trench are removed. A dielectric liner is then deposited on the side walls of the trench, the liner being made of a second dielectric material.
Claims19
A method for manufacturing a semiconductor device comprising an interconnect which includes electrically conductive portions forming an interconnect line and a dielectric layer made of a first dielectric material, said method comprising:
- forming a trench in the dielectric layer, said trench corresponding to said interconnect line, wherein the trench includes both side walls and a step;
- removing at least one damaged exposed portion of the dielectric layer from side walls of the trench, the damaged exposed portion being formed within the dielectric layer itself on both side walls and a step of the trench during said forming of the trench, wherein removing leaves the damaged exposed portion on the step;
- and
- depositing a dielectric liner on the side walls and step of the trench, said liner being made of a second dielectric material.
A method, comprising:
- forming a trench having sidewalls, a step and a floor in a dielectric layer formed of a first dielectric material above a metal interconnect, wherein said trench corresponds to an interconnect line for a semiconductor device, and wherein forming causes damage to regions of the dielectric layer itself along the sidewalls and step;
- removing the damaged regions of the dielectric layer itself on the sidewalls to expose undamaged sidewalls of the dielectric layer;
- and
- depositing a conformal dielectric liner on the undamaged sidewalls, the damaged step and the floor, the dielectric liner being made of a second dielectric material.
A method for manufacturing a semiconductor device comprising an interconnect which includes electrically conductive portions forming an interconnect line and a dielectric layer made of a first dielectric material, said method comprising:
- forming a trench in the dielectric layer said trench corresponding to said interconnect line, wherein the trench includes both side walls and a step, wherein said forming transforms the first dielectric material of the dielectric layer at the side walls and step of the trench into a damaged dielectric material;
- removing the damaged dielectric material of the dielectric layer along side walls of the trench, wherein removing the damaged dielectric material of the dielectric layer comprises removing the damaged dielectric material along the side walls of the trench while retaining the damaged dielectric material along the step of the trench;
- and
- depositing a dielectric liner on the side walls of the trench, said liner being made of a second dielectric material.
Dependencies are inferred from the claim text.