Semiconductor structures and methods of manufacture
AssigneeInternational Business Machines Corporation
InventorsBrent A. Anderson, Edward J. Nowak
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Abstract
Semiconductor structures and methods of manufacture semiconductors are provided which relate to transistors. The method of forming a transistor includes thermally annealing a selectively patterned dopant material formed on a high-k dielectric material to form a high charge density dielectric layer from the high-k dielectric material. The high charge density dielectric layer is formed with thermal annealing-induced electric dipoles at locations corresponding to the selectively patterned dopant material.
Claims20
A method of forming a transistor comprising:
- forming a lower dielectric material on an underlying substrate;
- forming a high-k dielectric material on the lower dielectric material, the lower dielectric material separating the high-k dielectric material from the underlying substrate;
- and
- thermally annealing a selectively patterned dopant material formed on the high-k dielectric material to form a high charge density dielectric layer from the high-k dielectric material, wherein the high charge density dielectric layer is formed with thermal annealing-induced electric dipoles at locations corresponding to the selectively patterned dopant material.
A method of forming a transistor comprising:
- forming a lower dielectric layer on a substrate;
- forming an upper dielectric layer on the lower dielectric layer;
- depositing a dopant material above the upper dielectric layer;
- selectively patterning the dopant material;
- and
- thermally annealing the dopant material to form a high charge density dielectric layer with electric dipoles, the electric dipoles being separated from the substrate by the lower dielectric material.
Dependencies are inferred from the claim text.