Substrate pretreatment for subsequent high temperature group III depositions
AssigneeApplied Materials, Inc.
InventorsYuriy Melnik, Olga Kryliouk, Hidehiro Kojiri, Tetsuya Ishikawa
Life of this patent
Estimating the term…
Abstract
Embodiments of the present invention relate to apparatus and method for pretreatment of substrates for manufacturing devices such as light emitting diodes (LEDs) or laser diodes (LDs). One embodiment of the present invention comprises pre-treating the aluminum oxide containing substrate by exposing a surface of the aluminum oxide containing substrate to a pretreatment gas mixture, wherein the pretreatment gas mixture comprises ammonia (NH3) and a halogen gas.
Claims19
A method for forming a group-III metal nitride film, comprising:
- heating one or more sapphire substrates to a pretreatment temperature;
- exposing a surface of each of the one or more sapphire substrates to a pretreatment gas mixture when the surface is at the pretreatment temperature to form a pretreated surface, wherein the pretreatment gas mixture comprises ammonia (NH3), a group-III metal halide gas and an etchant containing gas that comprises a halogen gas, and exposing the surface of the one or more sapphire substrates comprises forming a region of the pretreated surface that comprises aluminum oxynitride or aluminum nitride;
- and
- forming a group III metal nitride layer over the pretreated surface.
A method for forming a group-III metal nitride film, comprising:
- heating one or more sapphire substrates to a pretreatment temperature;
- exposing a surface of each of the one or more sapphire substrates to a pretreatment gas mixture when the surface is at the pretreatment temperature to form a pretreated surface, wherein the pretreatment gas mixture comprises ammonia (NH3) and an etchant containing gas that comprises a halogen gas, and exposing the surface of the one or more sapphire substrates comprises forming a region of the pretreated surface that comprises aluminum oxynitride or aluminum nitride;
- exposing a surface of the one or more sapphire substrates to a nitriding gas mixture for a first period of time;
- and
- forming a group III metal nitride layer over the pretreated surface.
Dependencies are inferred from the claim text.