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US 8,138,068 B2Granted
Method to form nanopore array
AssigneesInternational Business Machines Corporation, GLOBAL FOUNDRIES Inc.
InventorsZhengwen Li, Chengwen Pei, Frank Yang
Life of this patent
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Abstract
A method of forming nanopore is provided that includes forming a first structure on a substrate, and forming a second structure overlying the first structure. An intersecting portion of the first and the second structures is etched to provide an opening of nanopore dimensions. The substrate may be etched with a backside substrate etch to expose the nanopore opening.
Claims20
A method of forming a pore comprising;
- forming a first structure on a substrate;
- forming a second structure on the substrate, wherein the second structure is present on an intersecting portion of the first structure;
- forming an etch mask over exposed portions of the first structure and exposed portions of the substrate;
- first etching the second structure selective to the etch mask, wherein the first etching exposes the intersecting portion of the first structure, wherein a remaining portion of the second structure is present on opposing sides of the intersecting portion of the first structure;
- second etching the intersecting portion of the first structure selective to the etch mask and the remaining portion of the second structure to provide an opening to the substrate;
- and
- extending the opening through the substrate to provide a nanopore.
4 more elements
A method of forming a pore comprising:
- forming a first structure on a substrate;
- forming a first mask structure on the substrate and over a first end portion of the first structure;
- forming a second mask structure on the substrate adjacent and over a second end portion of the first structure;
- forming a second structure between the first mask structure and the second mask structure, the second structure overlapping the first structure;
- etching the second structure with an etch selective to the first mask structure and the second mask structure to provide an exposed intersecting portion of the first structure;
- and
- etching the exposed intersecting portion of the first structure to provide an opening.
4 more elements
A method of forming a pore comprising:
- forming a first sacrificial material on sidewalls of a first pedestal that is present on a substrate;
- forming a first hardmask adjacent to the first sacrificial material;
- removing the first sacrificial material to provide a first void between the first pedestal structure and the first hardmask;
- forming a first structure filling the first void;
- removing the first pedestal and the first hardmask selective to the first structure;
- forming a second pedestal on the substrate, wherein the second pedestal overlaps an intersecting portion of the first structure;
- forming a second structure on sidewalls of the second pedestal and on a first end portion of the first structure;
- forming a second mask adjacent to the second structure, wherein the second mask is present over a second end portion of the first structure;
- etching the second structure to expose the intersecting portion of the first structure, wherein a remaining portion of the second structure is present on opposing sides of the first structure;
- etching the intersecting portion of the first structure selective to the second structure, the second mask and the second pedestal to provide a nanopore;
- and
- etching the substrate with a backside etch to expose the nanopore.
9 more elements
Dependencies are inferred from the claim text.