Dislocation engineering using a scanned laser
AssigneeInternational Business Machines Corporation
InventorsChung Woh Lai, Xiao Hu Liu, Anita Madan, Klaus W. Schwarz, J. Campbell Scott
Life of this patent
Estimating the term…
Abstract
A method for generating patterned strained regions in a semiconductor device is provided. The method includes directing a light-emitting beam locally onto a surface portion of a semiconductor body; and manipulating a plurality of dislocations located proximate to the surface portion of the semiconductor body utilizing the light-emitting beam, the light-emitting beam being characterized as having a scan speed, so as to produce the patterned strained regions.
Claims10
A method for removing dislocations from a semiconductor device, comprising:
- directing a light-emitting beam locally onto a surface portion of a semiconductor body that includes active regions of the semiconductor device;
- and
- manipulating a plurality of dislocations located proximate to the surface portion of the semiconductor body utilizing the light-emitting beam, the light-emitting beam being characterized as having a scan speed;
- wherein manipulating the plurality of dislocations comprises directly scanning the plurality of dislocations with the light-emitting beam to drive the plurality of dislocations away from the surface portion of the semiconductor body and into a buried oxide layer, the buried oxide layer is disposed as a continuous and uninterrupted layer below the semiconductor body including the active regions and below silicon trench isolation regions disposed adjacent to the active regions, and the scanning enabling the elimination of the plurality of dislocations from the surface portion of the semiconductor body.
A method for removing dislocations from a semiconductor device, comprising:
- directing a laser beam locally onto a surface portion of a semiconductor body that includes active regions of the semiconductor device;
- operating the laser beam in a first mode of operation, the laser beam being characterized as having a scan speed;
- and
- manipulating a plurality of dislocations located proximate to the surface portion of the semiconductor body utilizing the laser beam;
- wherein the first mode of operation comprises directly scanning the plurality of dislocations with the laser beam to drive the plurality of dislocations away from the surface portion of the semiconductor body and into a buried oxide layer, the buried oxide layer is disposed as a continuous and uninterrupted layer below the semiconductor body including the active regions and below silicon trench isolation regions disposed adjacent to the active regions and the scanning enabling the elimination of the plurality of dislocations from the surface portion of the semiconductor body.
A system for manipulating dislocations on semiconductor devices, comprising:
- a semiconductor body including active regions having a plurality of dislocations the semiconductor body disposed on a continuous and uninterrupted buried oxide layer arranged below the semiconductor body including the active regions and below silicon trench isolation regions disposed adjacent to the active regions;
- and
- a moveable laser configured to generate a laser beam locally on a surface portion of the semiconductor body, the moveable laser being characterized as having a scan speed, the moveable laser manipulates the plurality of dislocations on the surface portion of the semiconductor body by adjusting the temperature and the scan speed of the laser beam to drive the plurality of dislocations from the semiconductor body into the buried oxide layer.
Dependencies are inferred from the claim text.