Electrical coupling of wafer structures

A method for electrically coupling a first wafer with a second wafer, the method comprising:

• bonding the first wafer with the second wafer;
• forming an opening in the first wafer in a scribe area of the second wafer to expose a surface of a conductive structure of the second wafer;
• and
• forming a conductive layer overlying the first wafer and the opening in the first wafer such that the conductive layer forms an electrical contact with the conductive structure of the second wafer thereby electrically coupling the first wafer with the second wafer,
• wherein the second wafer comprises a plurality of pads and the method further comprising forming a second opening in the first wafer to expose the plurality of pads, after the forming the opening in the first wafer.

A method for electrically coupling a first wafer with a second wafer, the method comprising:

• bonding the first wafer with the second wafer;
• forming an opening in the first wafer in a scribe area of the second wafer to expose a surface of a conductive structure of the second wafer;
• forming a conductive layer overlying the first wafer and the opening in the first wafer such that the conductive layer forms an electrical contact with the conductive structure of the second wafer thereby electrically coupling the first wafer with the second wafer;
• and
• separating the bonded first and second wafers into a plurality of die, wherein the separating includes removing material of a separation path of the second wafer, the separation path having a first width, wherein the opening has a second width, and wherein the first width and the second width are selected such that at least one portion of the conductive layer remains on at least one sidewall of a separated die and thereby provides electrical coupling between the first wafer and the second wafer.

A method for electrically coupling a cap wafer with a device wafer, the method comprising:

• bonding the cap wafer with the device wafer using a bonding material, wherein the device wafer comprises a substrate;
• forming an opening in the cap wafer and the bonding material in a scribe area of the device wafer to expose a surface of a conductive structure of the device wafer, wherein forming the opening through the cap wafer and the bonding material comprises sawing through the cap wafer and the bonding material in the scribe area of the device wafer;
• and
• forming a conductive layer overlying the cap wafer and the opening in the cap wafer such that the conductive layer forms an electrical contact with the conductive structure of the device wafer thereby electrically coupling the cap wafer with the device wafer.

A method for electrically coupling a first wafer with a second wafer, the method comprising:

• bonding the first wafer with the second wafer using a bonding material to form bonded wafers;
• forming an opening in the first wafer and the bonding material in a scribe area of the second wafer to expose a surface of a conductive structure of the second wafer;
• forming a conductive layer overlying the first wafer and the opening in the first wafer such that the conductive layer forms an electrical contact with the conductive structure of the second wafer thereby electrically coupling the first wafer with the second wafer;
• and
• separating the bonded wafers into a plurality of die, wherein the separating includes removing material of a separation path of the second wafer, the separation path having a first width, wherein the opening has a second width, and wherein the first width and the second width are selected such that at least one portion of the conductive layer remains on at least one sidewall of a separated die and thereby provides an electrical coupling between the first wafer and the second wafer.