Semiconductor device manufacturing method

A semiconductor device manufacturing method comprising:

• forming a core pattern on a foundation film, the core pattern containing a material generating acid by light exposure;
• selectively exposing part of the core pattern to light;
• supplying a mask material onto the foundation film so as to cover the core pattern, the mask material being crosslinkable upon supply of acid;
• removing part of the mask material to expose an upper surface of the core pattern and remove the mask material formed around an unexposed region of the core pattern, thereby leaving a mask material sidewall portion formed on a sidewall of the core pattern;
• and
• removing the core pattern and processing the foundation film by using the mask material sidewall portion left on the foundation film as a mask,
• the method further comprising:
• before the removing part of the mask material, causing a portion of the mask material in contact with the core pattern to crosslink by supply of acid from the core pattern, and then removing a non-crosslinked portion of the mask material.

A semiconductor device manufacturing method comprising:

• forming a core pattern on a foundation film, the core pattern containing a material generating acid by light exposure;
• selectively exposing part of the core pattern to light;
• supplying a mask material onto the foundation film so as to cover the core pattern, the mask material being crosslinkable upon supply of acid;
• removing part of the mask material to expose an upper surface of the core pattern and remove the mask material formed around an unexposed region of the core pattern, thereby leaving a mask material sidewall portion formed on a sidewall of the core pattern;
• and
• removing the core pattern and processing the foundation film by using the mask material sidewall portion left on the foundation film as a mask,
• wherein the mask material is supplied onto the foundation film before selectively exposing the core pattern to light.