Thermally insulated phase change material memory cells with pillar structure

A method for forming a memory cell structure, the method comprising:

• forming a bottom electrode within a substrate, the bottom electrode including electrode material that is electrically conductive;
• forming a pillar substantially over the center of the bottom electrode, the pillar including a phase change material above the bottom electrode and a top electrode above the phase change material;
• and
• depositing a film of thermally insulating material along at least one sidewall of the pillar and over a portion of a top surface of the top electrode;
• wherein forming the pillar further comprising:
• depositing a first layer between the phase change material and the bottom electrode and a second layer between the phase change material and the top electrode;
• and
• oxidizing the first and second layers such that a portion of the first layer and a portion of the second layer are thermally insulating and a portion of the first layer and a portion of the second layer are electrically conducting.