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US 8,138,047 B2Granted
Super junction semiconductor device
Assigneeinergy Technology Inc.
InventorMing-Jang Lin
Life of this patent
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Abstract
In the specification and drawing a super junction semiconductor device is disclosed. The super junction semiconductor device comprises a P-type layer, a N+ substrate, a N-type layer, a silicon dioxide layer and a P+ layer. The N+ substrate is disposed under the P-type layer. The N-type layer is disposed on the N+ substrate. The silicon dioxide layer is disposed between the N-type layer and the P-type layer. The P+ layer is disposed on the P-type layer and the N-type layer.
Claims5
A super junction semiconductor device, comprising:
- a P-type layer;
- a N+ substrate disposed under the P-type layer;
- a N-type layer disposed on the N+ substrate;
- and
- a silicon dioxide layer disposed laterally between the N-type layer and the P-type layer;
- and
- a P+ layer disposed on the P-type layer and the N-type layer;
- wherein the P-type layer and the silicon dioxide layer are disposed on the N+ substrate, and the silicon dioxide layer is disposed through the P+ layer.
5 more elements
A super junction semiconductor device, comprising:
- a P-type layer;
- a N+ substrate disposed under the P-type layer;
- a N-type layer disposed on the N+ substrate;
- and
- a silicon dioxide layer disposed laterally between the N-type layer and the P-type layer;
- and
- a P+ layer disposed on the P-type layer and the N-type layer;
- wherein the P-type layer and the silicon dioxide layer are disposed on a portion of the N-type layer, and the portion of the N-type layer is a N− region disposed between the P-type layer and the N+ substrate, wherein the silicon dioxide layer is disposed through the P+ layer.
5 more elements
Dependencies are inferred from the claim text.