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US 8,138,038 B2Granted
Superior fill conditions in a replacement gate approach by performing a polishing process based on a sacrificial fill material
AssigneeGlobalfoundries Inc.
InventorsJens Heinrich, Gerd Marxsen, Katja Steffen
Life of this patent
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Abstract
In a replacement gate approach, a top area of a gate opening may receive a superior cross-sectional shape after the deposition of a work function adjusting species on the basis of a polishing process, wherein a sacrificial material may protect the sensitive materials in the gate opening.
Claims22
A method, comprising:
- forming an opening in a gate electrode structure of a transistor by removing a placeholder electrode material of said gate electrode structure;
- forming a metal-containing material layer on sidewalls and above a bottom of said opening, said metal-containing material layer reducing an initial width of said opening;
- filling a sacrificial material in said opening so as to cover said metal-containing material layer at least at said bottom;
- increasing a reduced width of said opening at a top area thereof in the presence of at least a portion of said sacrificial material by performing a polishing process;
- removing said sacrificial material from said opening;
- and
- filling a conductive electrode material into said opening.
4 more elements
A method, comprising:
- forming an opening in a gate electrode structure of a transistor by removing a placeholder electrode material of said gate electrode structure;
- filling a sacrificial material in said opening so as to cover at least a bottom of said opening;
- increasing a width of said opening at a top area thereof in the presence of at least a portion of said sacrificial material by performing a polishing process;
- removing said at least a portion of said sacrificial material;
- and
- filling a conductive electrode material in said opening after removal of said at least a portion of said sacrificial material.
3 more elements
A method of forming a semiconductor device, the method comprising:
- forming an opening in a gate electrode structure of a transistor by removing a semiconductor material of said gate electrode structure;
- forming a material layer on exposed surface areas in said opening, said material layer comprising a species for adjusting a work function of said gate electrode structure, said material layer reducing an initial width of said opening;
- at least partially filling said opening of reduced width with a sacrificial organic material;
- and
- removing said material layer outside said opening by performing a chemical mechanical polishing process in the presence of said sacrificial organic material.
2 more elements
Dependencies are inferred from the claim text.