Semiconductor component and method of manufacture

A method for manufacturing a semiconductor component, comprising:

• providing a semiconductor substrate of a first conductivity type;
• forming a first epitaxial layer of the first conductivity type and a first resistivity over the semiconductor substrate;
• forming a second epitaxial layer of the first conductivity type and a second resistivity over the first epitaxial layer, the first epitaxial layer in contact with the semiconductor substrate and the second epitaxial layer, the second resistivity greater than the first resistivity;
• forming a plurality of trenches in the semiconductor material, wherein first and second trenches of the plurality of trenches extend from the major surface into the second epitaxial layer, and wherein the first trench has first and second opposing sidewalls and a bottom and the second trench has first and second opposing sidewalls and a bottom;
• forming a first dielectric material adjacent to the first and second sidewalls and the bottom of the first trench and a second dielectric material adjacent to the first and second sidewalls and the bottom of the second trench, the first and second dielectric materials extending from the major surface to the bottoms of the first and second trenches;
• forming a first polysilicon plug in the first trench and a second polysilicon plug in the second trench, the first polysilicon plug extending from the major surface to a region adjacent the bottom of the first trench and the second polysilicon plug extending from the major surface to a region adjacent the bottom of the second trench;
• forming a first doped region laterally adjacent the second trench;
• forming a Schottky contact to a first portion of the second epitaxial layer adjacent the first trench;
• and
• forming an edge termination structure over a second portion of the second epitaxial layer, wherein forming the edge termination structure comprises:
• forming a dielectric layer from the major surface of the second epitaxial layer, the dielectric layer having first and second opposing surfaces;
• forming a junction that terminates in a portion of the second epitaxial layer that is under the dielectric layer and adjacent the first opposing surface of the dielectric layer;
• and
• forming an electrically conductive material over the second opposing surface of the dielectric layer, the electrically conductive material extending beyond the junction.

A method for manufacturing a semiconductor component, comprising:

• providing a semiconductor material which comprises a first epitaxial layer of a first conductivity type and a first resistivity disposed over a substrate and a second epitaxial layer between the first epitaxial layer and the substrate, the first epitaxial layer having a major surface;
• forming a plurality of trenches in the semiconductor material, wherein first and second trenches of the plurality of trenches extend from the major surface into the first epitaxial layer, and wherein the first trench has first and second opposing sidewalls and a first bottom and the second trench has third and fourth opposing sidewalls and a second bottom;
• forming a first dielectric material adjacent to the first and second opposing sidewalls and the first bottom of the first trench and a second dielectric material adjacent the third and fourth opposing sidewalls and the second bottom of the second trench, the first and second dielectric materials extending from the major surface to the bottoms of the first and second trenches;
• forming a first polysilicon plug in the first trench and a second polysilicon plug in the second trench, the first polysilicon plug extending from the major surface to a region of adjacent the first bottom of the first trench and the second polysilicon plug extending from the major surface to a region adjacent the second bottom of the second trench;
• forming a first doped region laterally adjacent the second trench;
• forming a doped region of the first conductivity type in the first epitaxial layer;
• and
• forming an edge termination structure over a first portion of the first epitaxial layer, the edge termination structure comprising:
• forming a dielectric layer from the major surface of the first epitaxial layer, the dielectric layer having first and second opposing surfaces;
• forming a junction that terminates in a portion of the first epitaxial layer that is under the dielectric layer and adjacent the first opposing surface of the dielectric layer;
• and
• forming an electrically conductive material over the second opposing surface of the dielectric layer, the electrically conductive material extending beyond the junction.