Semiconductor device and method of manufacturing semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorAtsushi Yagishita
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Abstract
A method of manufacturing a semiconductor device includes forming a plurality of Fins including a semiconductor material on an insulation layer; forming gate insulation films on sidewalls of the Fins; forming a gate electrode which extends in a direction of arrangement of the Fins and which is electrically insulated from the Fins, the gate electrode is common in the Fins on the gate insulation film; implanting an impurity into portions of the Fins by using the gate electrode as a mask to form a source-drain diffusion layer, the portions of the Fins extending on both sides of the gate electrodes; and depositing a conductive material on both sides of the Fins to connect the Fins to each other.
Claims7
A method of manufacturing a semiconductor device comprising:
- forming a plurality of Fins including a semiconductor material on an insulation layer;
- forming gate insulation films on sidewalls of the Fins;
- forming a gate electrode which extends in a direction of arrangement of the Fins and which is electrically insulated from the Fins, the gate electrode is common in the Fins on the gate insulation film;
- implanting an impurity into portions of the Fins by using the gate electrode as a mask to form a source-drain diffusion layer, the portions of the Fins extending on both sides of the gate electrodes;
- and
- depositing a conductive material on both sides of the Fins to connect the Fins to each other.
Dependencies are inferred from the claim text.