Structure and method having asymmetrical junction or reverse halo profile for semiconductor on insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET)

A method of forming a device comprising:

• providing a first substrate comprising a first semiconductor layer present on a surface of the first substrate, and a second semiconductor layer present on the first semiconductor layer, wherein the first semiconductor layer has a different composition than the second semiconductor layer,
• forming a first gate structure to a first semiconductor device on a first portion of the second semiconductor layer;
• etching a second portion of the second semiconductor layer that is adjacent to the first portion of the second semiconductor layer, and etching a portion of the first semiconductor layer that is present underlying the second portion of the second semiconductor layer;
• growing a third semiconductor layer on a remaining thickness of the first semiconductor layer;
• forming source regions and drain regions of the first semiconductor device into the third semiconductor layer and the remaining thickness of the first semiconductor layer;
• removing at least a portion of the first substrate, the first semiconductor layer and the second semiconductor layer underlying the gate structure to provide a recess aligned to the gate structure;
• forming a metal nitride spacer on one sidewall of the recess;
• and
• filling the recess with a dielectric material.