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US 8,138,023 B2Granted
Method for forming laminated structure and method for manufacturing semiconductor device using the method thereof
AssigneeLapis Semiconductor Co., Ltd.
InventorYoshimi Egawa
Life of this patent
Estimating the term…
Abstract
A method for manufacturing a semiconductor device includes the steps of (a) preparing a wafer including a first circuit formation region and a first surrounding region, (b) laminating a first chip on the first circuit formation region, (c) pouring a first underfill into a first space between the first circuit formation region and the first chip from the first surrounding region, (d) hardening the first underfill, (e) forming a laminated structure comprised of a first chip block that includes a second chip including the first circuit formation region, the first chip, and the first underfill by conducting dicing with respect to the wafer; and (f) laminating the laminated structure on a substrate.
Claims18
A method for manufacturing a semiconductor device, comprising the steps of:
- preparing a wafer including a first circuit formation region and a first surrounding region formed to surround said first circuit formation region, the first circuit formation region having a plurality of first through-electrodes and a plurality of first bumps formed respectively on a surface of each first through-electrode of the plurality of first through-electrodes;
- laminating a first chip on said first circuit formation region in contact with the plurality of first bumps, said first chip having a plane dimension that is substantially the same as a plane dimension of said first circuit formation region;
- pouring a first underfill comprised of a first resin into a first space between said first circuit formation region and said first chip from said first surrounding region, the first underfill having a first viscosity;
- hardening said first underfill;
- forming a laminated structure comprised of a first chip block that includes a second chip including said first circuit formation region, said first chip, and said first underfill by conducting dicing with respect to said wafer, the second chip having a plurality of second through-electrodes and a plurality of second bumps formed respectively on a surface of each second through-electrode of the plurality of second through-electrodes that is opposite that of the plurality of first bumps;
- laminating said laminated structure on a substrate;
- pouring a second underfill comprised of a second resin into a second space between said laminated structure and said substrate, the second underfill having a second viscosity that is higher than that of said first underfill;
- and
- hardening said second underfill.
6 more elements
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a first chip block by laminating a first chip that has a first plane dimension and includes a first surrounding region and a second chip having a second plane dimension that is smaller than the first plane dimension, the first chip having a plurality of first through-electrodes and a plurality of first bumps formed respectively on a surface of each first through-electrode of the plurality of first through-electrodes, and the second chip having a plurality of second through-electrodes and a plurality of second bumps formed respectively on a surface of each second through-electrode of the plurality of second through-electrodes that is opposite that of the plurality of first bumps of the first chip;
- pouring a first underfill comprised of a first resin into a first space between the first chip and the second chip from the surrounding region, the first underfill having a first viscosity;
- forming a laminated structure comprised of the first chip block by hardening the first underfill;
- and
- laminating the laminated structure on a substrate in contact with respective ones of the plurality of second bumps;
- pouring a second underfill comprised of a second resin into a second space between the laminated structure including the plurality of second bumps and the substrate, the second underfill having a second viscosity that is higher than that of the first underfill;
- and
- hardening the second underfill.
5 more elements
A method for manufacturing a semiconductor device, comprising the steps of:
- preparing a wafer including a plurality of first circuit formation regions and a first surrounding region formed to surround the plurality of the first circuit formation regions, each first circuit formation region of the plurality of first circuit formation regions having a plurality of first through-electrodes and a plurality of first bumps formed respectively on a surface of each first through-electrode of the plurality of first through-electrodes;
- laminating a plurality of first chips on respective ones of the plurality of said first circuit formation regions in contact with respective ones of the plurality of first bumps, the plurality of first chips having plane dimensions that are substantially the same as plane dimensions of the plurality of first circuit formation regions, respectively;
- pouring a first underfill comprised of a first resin into first spaces between the plurality of first circuit formation regions and the plurality of said first chips from the first surrounding region, the first underfill having a first viscosity;
- hardening the first underfill;
- forming a plurality of first chip sub-blocks that include (a) each of a plurality of second chips including each of the plurality of first circuit formation regions, (b) each of the plurality of first chips, and (c) the first underfill by conducting dicing with respect to the wafer, each second chip of the plurality of second chips having a plurality of second through-electrodes and a plurality of second bumps formed respectively on a surface of each second through-electrode of the plurality of second through-electrodes that is opposite that of the plurality of first bumps;
- laminating one of the first chip sub-blocks on a substrate of another of the first chip sub-blocks in contact with respective ones of the plurality of second bumps;
- pouring a second underfill comprised of a second resin into a second space between said one of the first chip sub-blocks and the another of the first chip sub-blocks, the second underfill having a second viscosity that is higher than that of said first underfill;
- and
- hardening said second underfill.
6 more elements
Dependencies are inferred from the claim text.