Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, comprising the steps of:

• (a) providing a first substrate having a first main surface, a first electrode pad formed over the first main surface, a second electrode pad disposed closer to the peripheral part side of the first main surface than the first electrode pad, a first conductive member formed over the second electrode pad, a first back surface on the opposite side of the first main surface, and a third electrode pad formed on the first back surface;
• (b) mounting a semiconductor chip having a front surface, a bonding pad formed over the front surface, and a back surface on the opposite side of the front surface over the first main surface of the first substrate;
• (c) electrically coupling the bonding pad of the semiconductor chip and the first electrode pad of the first substrate via a second conductive member;
• (d) disposing a second substrate having a second main surface, a fourth electrode pad formed over the second main surface, a second back surface on the opposite side of the second main surface, a through hole formed from the second main surface toward the second back surface, and a through-hole wiring formed within the through hole over the first substrate such that the first conductive member is located within the through hole and the second back surface of the second substrate faces to the first main surface of the first substrate, and electrically coupling the first conductive member and the through-hole wiring;
• and
• (e) after the (d) step, forming an external terminal at the third electrode pad of the first substrate,
• wherein the height of the first conductive member is greater than the thickness of the semiconductor chip.