MEMS device with stress isolation and method of fabrication
AssigneeFreescale Semiconductor, Inc.
InventorAaron A. Geisberger
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AssigneeFreescale Semiconductor, Inc.
InventorAaron A. Geisberger
Estimating the term…
A MEMS device (20) with stress isolation includes elements (28, 30, 32) formed in a first structural layer (24) and elements (68, 70) formed in a second structural layer (26), with the layer (26) being spaced apart from the first structural layer (24). Fabrication methodology (80) entails forming (92, 94, 104) junctions (72, 74) between the layers (24, 26). The junctions (72, 74) connect corresponding elements (30, 32) of the first layer (24) with elements (68, 70) of the second layer (26). The fabrication methodology (80) further entails releasing the structural layers (24, 26) from an underlying substrate (22) so that all of the elements (30, 32, 68, 70) are suspended above the substrate (22) of the MEMS device (20), wherein attachment of the elements (30, 32, 68, 70) with the substrate (22) occurs only at a central area (46) of the substrate (22).
A method for fabricating a microelectromechanical systems (MEMS) device isolated from a substrate comprising:
A method for fabricating a microelectromechanical systems (MEMS) device isolated from a substrate comprising:
A method for fabricating a microelectromechanical systems (MEMS) device isolated from a substrate comprising:
A method for fabricating a microelectromechanical systems (MEMS) device isolated from a substrate comprising:
A method for fabricating a microelectromechanical systems (MEMS) device isolated from a substrate comprising:
Dependencies are inferred from the claim text.