Semiconductor light-emitting device and method for producing semiconductor light-emitting device
AssigneeShowa Denko K.K.
InventorTakashi Watanabe
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Abstract
The present invention provides a semiconductor light-emitting device that includes a compound semiconductor layer formed by laminating a first clad layer, a light-emitting layer and a second clad layer, a plurality of first ohmic electrodes formed on the first clad layer, a plurality of second ohmic electrodes formed on the second clad layer, a transparent conductive film that is formed on the first clad layer of the compound semiconductor layer and is conductively connected to the first ohmic electrodes, a bonding electrode formed on the transparent conducting film, and a support plate that is positioned on the second clad layer side of the compound semiconductor layer and is conductively connected to the second ohmic electrodes.
Claims10
A semiconductor light-emitting device, comprising:
- a compound semiconductor layer formed by laminating at least a first conductive type first clad layer formed from a group III-V compound semiconductor, a light-emitting layer formed from either a first conductive type or an opposite second conductive type group III-V compound semiconductor, and a second conductive type second clad layer formed from a group III-V compound semiconductor,
- a plurality of first ohmic electrodes formed on said first clad layer,
- a plurality of second ohmic electrodes formed on said second clad layer,
- a transparent conductive film that is foimed on said first clad layer of said compound semiconductor layer and is conductively connected to said first ohmic electrodes,
- a bonding electrode formed on said transparent conductive film, and
- a support plate that is positioned on a side of said second clad layer of said compound semiconductor layer and is conductively connected to said second ohmic electrodes, in which
- said first ohmic electrodes are positioned by being dispersed across a surface of said first clad layer,
- a plurality of depressions are provided within a bonding surface of said second clad layer on a side of said support plate, and said second ohmic electrodes are positioned within bottom portions of said depressions,
- said compound semiconductor layer is provided with a current diffusion layer that coats said bonding surface of said second clad layer, surfaces of said second ohmic electrodes within said depressions, and side portions of said depressions, and
- said support plate is bonded to said current diffusion layer.
A method for producing a semiconductor light-emitting device, said method comprising:
- a compound semiconductor layer formation step of sequentially forming at least a first conductive type first clad layer formed from a group III-V compound semiconductor, a light-emitting layer formed from either a first conductive type or an opposite second conductive type group III-V compound semiconductor, and a second conductive type second clad layer formed from a group III-V compound semiconductor on top of a substrate,
- a depression formation step of forming a plurality of depressions in an upper surface of said second clad layer,
- a second ohmic electrode formation step of forming second ohmic electrodes within bottom portions of said depressions,
- a current diffusion layer formation step of forming a current diffusion layer that coats surfaces of said second ohmic electrodes within said depressions, side portions of said depressions, and a surface of said second clad layer in a region outside of said depressions,
- a support plate bonding step of bonding said current diffusion layer to a support plate having a bonding surface for bonding to said current diffusion layer that is coated with an identical material to a material of said current diffusion layer, so that voids are left within said depressions,
- a substrate removal step of removing said substrate,
- a first ohmic electrode formation step of forming first ohmic electrodes in a dispersed arrangement across an upper surface of said first clad layer, and
- a bonding electrode formation step of coating a region surrounding said first ohmic electrodes with a transparent conductive film, and forming a bonding electrode on an upper surface of said transparent conductive film.
Dependencies are inferred from the claim text.