Method for manufacturing semiconductor device
AssigneeRenesas Electronics Corporation
InventorToshiki Gonda
Life of this patent
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Abstract
Disclosed is a method for manufacturing a semiconductor device. The method comprises: forming a resist layer over a substrate; exposing the resist layer to light thereby to form a first exposed pattern and a second exposed pattern on the resist layer, the second exposed pattern being used for forming one or more trenches; contacting the resist layer with a developing solution thereby to form a patterned resist having an opening corresponding to the first exposed pattern and to form one or more trenches corresponding to the second exposed pattern on a surface layer of the patterned resist; and conducting a bake process on the patterned resist.
Claims19
A method for manufacturing a semiconductor device, comprising:
- forming a resist layer over a substrate;
- exposing said resist layer to light thereby to form a first exposed pattern and a second exposed pattern on said resist layer, said first exposed pattern being adapted to remove the resist layer from the substrate and said second exposed pattern being adapted to form one or more trenches that are in a surface layer of the resist layer spaced from said first exposed pattern and do not extend to the substrate;
- contacting said resist layer with a developing solution thereby to remove the resist layer from an opening corresponding to said first exposed pattern to expose the substrate in the opening, and to form said one or more trenches corresponding to said second exposed pattern;
- and
- conducting a bake process on said patterned resist.
Dependencies are inferred from the claim text.