Method and system for fracturing a pattern using charged particle beam lithography with multiple exposure passes which expose different surface area
AssigneeD2S, Inc.
InventorsHarold Robert Zable, Akira Fujimura
Life of this patent
Estimating the term…
Abstract
In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, in which the union of shots from one of a plurality of exposure passes is different than the union of shots from a different exposure pass. Methods for manufacturing a reticle and for manufacturing an integrated circuit are also disclosed, in which the union of shots from one of a plurality of charged particle beam exposure passes is different than the union of shots from a different exposure pass.
Claims26
A method for fracturing or mask data preparation or proximity effect correction for charged particle beam lithography comprising:
- determining a plurality of shots for each of a plurality of exposure passes, wherein the union of the plurality of shots for any exposure pass in the plurality of exposure passes is different than the union of the pluralities of shots for all of the exposure passes, and wherein all shots for each exposure pass in the plurality of exposure passes are selected from the group consisting of variable shaped beam (VSB) shots and character projection (CP) shots.
A method for forming a set of patterns on a surface using charged particle beam lithography comprising exposing a plurality of shots for each of a plurality of exposure passes, wherein the union of the plurality of shots for any exposure pass in the plurality of exposure passes is different than the union of the pluralities of shots for all of the exposure passes, and wherein all shots for each exposure pass in the plurality of exposure passes are selected from the group consisting of variable shaped beam (VSB) shots and character projection (CP) shots.
A method for manufacturing an integrated circuit using an optical lithographic process, the optical lithographic process using a reticle, the method comprising:
- a) providing a charged particle beam source;
- b) setting a base dosage level for an exposure pass;
- c) exposing a plurality of shots for the exposure pass using the set base dosage level, wherein all shots in the plurality of shots are selected from the group consisting of variable shaped beam (VSB) shots and character projection (CP) shots;
- and
- d) repeating steps b) and c) for at least one additional exposure pass,
- wherein the sum of the pluralities of shots for all of the exposure passes can form a set of desired patterns on the reticle, and wherein the union of the plurality of shots for any exposure pass is different than the union of the pluralities of shots for all of the exposure passes.
A system for fracturing or mask data preparation or proximity effect correction for use with shaped beam charged particle beam lithography comprising:
- a set of patterns to be formed on a surface;
- a computation device capable of determining a set of shots that can be used to form the set of patterns, wherein the set of shots comprises a plurality of shots for each of a plurality of exposure passes, and wherein the union of the plurality of shots for any exposure pass in the plurality of exposure passes is different than the union of the pluralities of shots for all of the exposure passes, and wherein all shots in the set of shots are selected from the group consisting of variable shaped beam (VSB) shots and character projection (CP) shots;
- and
- an output device capable of outputting the determined set of shots.
A method for fracturing or mask data preparation or proximity effect correction for charged particle beam lithography comprising:
- determining a plurality of shots for each of a plurality of exposure passes, wherein a shot in one exposure pass overlaps a shot in a different exposure pass, and wherein a shot in each exposure pass covers area uniquely covered in that exposure pass only, and wherein all shots for each exposure pass in the plurality of exposure passes are selected from the group consisting of variable shaped beam (VSB) shots and character projection (CP) shots.
A method for forming a set of patterns on a surface using charged particle beam lithography comprising:
- exposing a plurality of shots for each of a plurality of exposure passes, wherein a shot in one exposure pass overlaps a shot in a different exposure pass, and wherein a shot in each exposure pass covers area uniquely covered in that exposure pass only, and wherein all shots for each exposure pass in the plurality of exposure passes are selected from the group consisting of variable shaped beam (VSB) shots and character projection (CP) shots.
Dependencies are inferred from the claim text.